X-RAY TRANSMISSION TOPOGRAPHY STUDIES OF POST-IMPLANTATION DEFORMATION OF Si CRYSTALS CAUSED BY HIGH-ENERGY IONS

J. N. Górecka, J. Auleytner

Institute of Physics, Polish Academy of Sciences, Warsaw, Poland


X-ray transmission topography has been applied to study postimplantational effects in a silicon crystal implanted with high energy argon ions (1.76 GeV/ion). The depth distribution of changes in interplanar distances has been obtained from the comparison of experimental results with numerical simulations of the contrast on transmission traverse topographs.