J. N. Górecka, J. Auleytner
Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
X-ray transmission topography has been applied to study postimplantational effects in a silicon crystal
implanted with high energy argon ions (1.76 GeV/ion). The depth distribution of changes in interplanar
distances has been obtained from the comparison of experimental results with numerical simulations of
the contrast on transmission traverse topographs.