K. Wieteska1, W. K. Wierzchowski2, J. Maurin1
1 Institute of Atomic Energy, 05-400 Świerk-Otwock,
2 Institute of Electronic Materials Technology, 01-919 Warsaw, Wólczyńska 133, Poland
Rocking curves in silicon implanted with 4.8 MeV a-particles are explained by theoretical curves,
obtained by numerical integration of Takagi-Taupin equations with a diffused profile of lattice
parameter changes in the destroyed layer. The theoretical curves revealed the double modulation while
in the experiment only the slow modulation with increasing period was visible.
On the base of simultaneous consideration grounded on the plane-wave theory we interpret the slow
modulation as due to the change in the width of the layer decomposing the wave-fields. This
interpretation also well explains the features of the interference fringes in the double-crystal
topographs which are due to the lens-shaped inhomogeneity of the destroyed layer thickness.