X-RAY INVESTIGATION OF POSTIMPLANTATION DEFECTS IN SILICON CRYSTALS

D. Żymierska, J. Auleytner

Institute of Physics of the Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland


An attempt of explanation of origin of X-ray diffraction images of extended defects, arising from irradiation of silicon single crystals by the medium dose Ar ions of energy 150 keV, is presented.