EVALUATION OF ANNEALING AND STRESS INFLUENCE ON STRUCTURAL PERFECTION OF Cz-Si BY ANALYSIS OF STATIC DEBYE-WALLER FACTOR

L. I. Datsenko1, A. Misiuk2, L. A. Vorontsova1

1 Institute of Semiconductor Physics, Ukrainian Academy of Sciences, Prospect Nauki 45, 252650 Kiev, Ukraine,
2 Institute of Electron Technology, Al. Lotników 32/45, 02-668 Warsaw, Poland


Structural perfection of Cz-Si single crystals subjected to the high temperature-high pressure treatment was quantitatively investigated by means of the analysis of diffuse scattering contribution to the high order Laue maxima. The corresponding values of the static Debye-Waller factor L were determined. The L values were found to be dependent on the conditions of pressure-temperature treatment.