A Misiuk1, J. Wolf2, L. Datsenko1, J. Adamczewska1,
J. B¹k-Misiuk4
1 Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland,
2 Friedrich-Schiller-Universitaet, Max-Wien Platz 1, Jena, Germany,
3 Institute of Semiconductor Physics, Prosp. Nauki 45, Kiev, Ukraine,
4 Institute of Physics, Al. Lotników 32/46, 02-668 Warszawa, Poland
Strain related effects at SiOx/Si boundary in Czochralski grown silicon have been investigated by
subjecting the samples to hydrostatic pressures up to 2.5 GPa at temperatures up to 1550 K. Samples have
been examined by X-ray and infrared methods.
Observed effects are caused by severall phenomena. For the samples pressurized up to 1.3 GPa at
room temperature, there is an evidence of primary defect annihilation, whereas for that subjected
to higher pressures, also of additional defect creation. The effect of short-time high pressure -
high temperature treatment (5 minutes) can be explained in the similar way whereas after
prolonged pressurization, the other phenomena related to enhanced diffusion, dominate.