A. J. Kordyasz1, E. Nossazewska-Orlowska2, J. Sarnecki2
1 Warsaw University, Heavy Ion Laboratory, PL-02-097 Warsaw, Poland,
2 Institute of Electronic Materials Technology, 01-919 Warsaw, Poland
The 4 inch silicon epitaxial n+ - v - p+ structures were used for production of an epitaxial detector with build-in-electric field. The detector v layer was 65 µm thick 64 cm2 of the detector active area. The energy resolution was about 470 keV for 5.486 MeV alpha-particles with 4.5 volt detector bias. The detector capacitance was about 104 pF.