J. Krynicki1, J. Puton2, J. Oleniak3, S. Warchoł1, H. Rzewuski1
1 Institute of Nuclear Chemistry and Technology, Dorodna 16 str., 03-195 Warsaw, Poland,
2 Military University of Technology, S. Kaliskiego 2 Str., 01-489 Warsaw, Poland,
3 Department of Chemical and Process Engineering Warsaw Technical University, Warynskiego 1 str., 00-645 Warsaw, Poland
A new computer program for depth distribution calculations of high energy ions implanted into solids has been presented. It provides a possibility of obtaining any shape of the implanted ion profiles for high energy ions assuming, that the correlation between the Rp and DRp is known. In particular, it provides high computer efficiency while maintaining a high degree of accuracy.
To ilustrate applicability and reliability of the program a number of representative calculations have been performed. High energy Sb+ ion implantation into Si crystals was performed for the case of flat and linear implantation profiles.
Rutherford Backscattering Spectroscopy has been used to determine depth distributions of the implanted ions. It was found that a very good agreement is held between the assumed theoretical profiles and measured ion distributions. The possible fitting errors manifested by the program are considerably smaller than the accuracy of the method of measurement and the precision of the implantation technique.
The experimental results confirm a possibility of the effective application of the high energy ion implantation technique for producing a required distribution of implanted ions in a thin layer of a crystal.