Shallow p⁺ -n junctions in silicon for ultraviolet range photodiode application are simulated using the ATHENA/SSUPREM4 software package and manufactured by means of double peak implantation of BF₂⁺ ions with energies and doses (10/34) keV and (1/3)x10¹⁵cm^-2, respectively. The case of dual implantations of F⁺ ions followed by B⁺ ions with the energies and doses (34/7.6) keV and (2.5/3.0)x10¹⁵cm^-2, respectively has been also investigated. The physical and electrical parameters of the photodiodes manufactured in different variants were simulated and tested.