The Secondary Ion Mass Spectrometry (SIMS) depth profile analysis has been performed on a 20 nm thick sandwich structure, composed of 10 layers of B₄C/Mo, each 2 nm thick, deposited on the silicon substrate. In order to reduce roughening effects, ion bombardment at the inclined angle and sample rotation have been applied. The comparison of the standard-stationary sample technique with the sample rotation technique is presented. The analyses were performed on the SAJW-02 analyser using 4 keV, 100 nA, Ar⁺ and O₂⁺ ion beam.