Structural changes in semiconductors caused by hydrogen plasma treatment are the subject of great interest due to passivation of defect levels in the band gap. On the other hand, the reactions between extended and hydrogen-induced defects in silicon are of significant interest for the development of new defect engineering concepts. The experimental results of the interaction among hydrogen-related defects and extended imperfections (dislocations) obtained by ion implantation and annealing are presented in this paper.