Ion beam-induced amorphization and crystallization in InP implanted at room temperature with swift (250 and 340 MeV) Xe⁺ ions to doses of 5x10¹³ and 1x10¹⁴ cm^-2, respectively, are investigated by the transmission electron microscopy. For the ion fluences above 5x10¹³ cm^-2 the formation of amorphous InP of two different atomic structures is registered after swift Xe ion implantation as a consequence of electron and nuclear energy deposition. In the case of the highest ion dose implanted (1x10¹⁴cm^-2) a partial crystallization of the amorphous surface layer to polycrystalline InP is observed. The crystallization process passes a stage of wurtzite InP phase formation which is found to be metastable.