A. Werbowy1, P. Pawłowski2, J. Siwiec3, J. Szmidt1, A. Olszyna2, A. Sokołowska2
1 Institute of Microelectronics and Optoelectronic, Warsaw University of Technology, 75 Koszykowa Str., 00-662 Warsaw, Poland,
2 Faculty of Materials Science, Warsaw University of Technology, 85 Narbutta Str., 02-524 Warsaw, Poland,
3 Institute of Experimental Physics, Warsaw University, 69 Hoza Str., 00-681 Warsaw, Poland
The paper presents the results on investigations of heterojunction of nanocrystalline AIN layers of p-type with n-type Si. The layers were produced with the impulse plasma assisted MO CVD at 300 K. The heterostructures exhibited the photovoltaic effect with the enlarged spectral quantum efficiency as well as good rectifying and electroluminescence properties.