MODIFICATION OF TEMPERATURE DEPENDENCE OF MANGANIN RESISTANCE USING THE ION IMPLANTATION TECHNIQUES

B. Słowiński1,2, T. Wilczyńska2, R. Wiśniewski1

1 Institute of Physics, Warsaw University of Technology, 75 Koszykowa Str., 00-662 Warsaw, Poland,
2 Institute of Atomic Energy, 05-400 Swierk/Otwock, Poland

The problem of the improvement of the resistance dependence on temperature of manganin pressure sensor is discussed. Using 46 MeV 40Ar and 118 MeV 136Xe ions with the fluences of 3x1013 and 2.5x1014 cm-2, respectively, a clear shift of the characteristic temperature, at which the manganin resistance reaches its maximum value, toward lower values and a small increase of pressure sensitivity have been observed.