P. Żukowski, J. Partyka, P. Węgierek, M. Kozak
Lublin Technical University, Faculty of Electrical Engineering, 38A Nadbystrzycka Str., 20-618 Lublin, Poland
The present work includes a comparison of permittivity variations in the silicon irradiated with neutrons and additionally implanted with ions, the changes occurring in the course of thermal annealing.