II International Symposium: Ion Implantation and other Application of Ions and Electrons – ION’98
Kazimierz Dolny o/Wisła, Poland, 16-19 June, 1998
- A. Turos, A. Stonert, B. Breeger, E. Wendler, W. Wesch
Thermally activated defect transformations in III-V compound semiconductors
pp 93-101 - J. Hereć, J. Filiks, J. Sielanko
SIMS study of low energy implantation
pp 103-110 - A. Droździel, K. Kornarzyński, J. Romanek, D. Mączka, A. Latuszyński
Positive and negative ion production in the ion sputtering process
pp 111-118 - J. Hereć, J. Filiks, M. Sowa, J. Sielanko, D. Mączka
Negative ion source for SIMS application
pp 119-128 - B. Jaroszewicz, D. Tomaszewski, W. Słysz, P. Grabiec, W. Jung
Application of simulation tools for design of large area silicon photodetector technology
pp 129-135 - K. Kiszczak
Cold hollow cathode ion source
pp 137-142 - P. Konarski
Sample rotation applied in the SIMS depth profile analysis of layered structures
pp 143-148 - A. Latuszyński, D. Mączka
Atom ionization in the high-temperature cavity thermoionizer
pp 149-154 - W. Słówko
Three-dimensional surface imaging by the directional signal detection
pp 155-160 - W. Drzazga, W. Słówko
Electron optical properties of retarding lenses for the low voltage SEM
pp 161-166 - M. Kulik, S. O. Saied, J. Liśkiewicz, D. Mączka
Oxide layers on implanted GaAs surfaces: X-ray-photoelectron spectroscopy and ellipsometry study
pp 167-173 - O. V. Milchanin, P. I. Gaiduk, F. F. Komarov
Interaction between pre-existing dislocations in silicon and hydrogen-induced defects introduced by plasma treatment
pp 175-179 - F. Nickel
The energy loss of swift ions in solids
pp 181-187 - P. I. Gaiduk, F. F. Komarov, V. S. Tishkov, O. Herre, E. Wendler, W. Wesch
Wurtzite InP phase formation during swift Xe ion irradiation
pp 189-193 - B. Kamieńska-Krzowska, P. Tarkowski
Friction and wear processes modification of ion implanted steel
pp 195-200 - F. F. Komarov, A. S. Kamyshan, A. M. Mironov
Formation of horizontal and vertical insulation in semiconductors by ion implantation
pp 201-206 - D. Krupa, J. Baszkiewicz, E. Jezierska, J. Kozubowski, A. Barcz
Effect of nitrogen, carbon and oxygen ion implantation on the structure and corrosion resistance of OT-4-0 titanium alloy
pp 207-216 - I. Mrochek, R. Guenzel, W. Matz, W. Moeller, V. Anishchik
Implantation of boron ions into hard metals
pp 217-223 - J. Narojczyk, J. Piekoszewski, E. Richter, Z. Werner
Wear properties of TiN coated cutting tools implanted with nitrogen ions
pp 225-230 - A. Olszyna, P. Pawłowski
Oxygen-free AIN coatings produced from AIN(O) powder in the impulse nitrogen plasma
pp 231-237 - J. Piekoszewski, Z. Werner, E. Wieser, et al.
Formation of surface Pd-Ti alloys using the pulsed plasma beams
pp 239-245 - P. Tarkowski, K. Łukasik, P. Budzyński, J. Liśkiewicz
About possibility of improving durability of metal forming tools by ion implantation
pp 247-251 - A. Werbowy, P. Pawłowski, J. Siwiec, J. Szmidt, A. Olszyna, A. Sokołowska
AIN layers plasmochemically produced as semiconductors
pp 253-260 - Z. Werner, J. Jagielski, J. Piekoszewski, L. Kubiak, R. Guenzel
Improvement of the wear properties of cutting tools implanted with nitrogen ions
pp 261-264 - J. Wilk, Z. W. Kowalski
Ion-beam modification of stainless steel surface roughness
pp 265-270 - B. Słowiński
Deep ion implantation: advantages and current problems
pp 271-275 - B. Słowinski, T. Wilczyńska, R. Wiśniewski
Modification of temperature dependence of manganin resistance using the ion implantation techniques
pp 277-280 - P. Żukowski, J. Partyka, P. Węgierek, M. Kozak
Comparison of permittivity of ion implanted silicon and silicon bombared with neutrons
pp 281-284 - P. Żukowski, J. Partyka, P. Węgierek
Changes in permittivity of silicon implanted through an aluminum layer
pp 285-288 - P. Żukowski, C. Karwat, M. Łozak, J. Liśkiewicz
A new method for determining changes in hardness of implanted materials
pp 289-292 - J. Dąbek, L. Michalak
Study of CO2 clusters by mass spectrometry
pp 293-297 - K. Gront, T. Gwizdałła, J. Czerbniak
Channelling of H0 projectile
pp 299-307 - A. P. Kobzev
Element depth profiling of implanted samples
pp 309-315 - A. Pelc, L. Michalak
Electron impact study of argon clusters
pp 317-327 - J. Ruzicka, S. Saro, L. Krupa, et al.
Some peculiarities of the Vavilov-Cherenkov radiation emitted by heavy ions
pp 329-334 - J. Żuk, R. Kuduk
Ion beam induced luminescence of porous silicon: a comparative study
pp 335-340 - Z. Gacek, K. Maźniewski
Similarity and differences of certain electrification processes in some fluids
pp 341-347 - Z. Synowiec
Electrical conductivity of implant isolation in GaAs
pp 349-355 - K. Marszalek, E. Leja
Industrial Arc based equipment for decorative coating deposition
pp 357-361 - A. F. Komarov, F. F. Komarov, P. Żukowski, C. Karwat, A.L. Shukan
Simulation of the process of high dose ion implantation in solid targets
pp 363-367 - J. Martan
Collision cascade as a fractal
pp 369-374 - V. A. Belyi, F. F. Komarov
Model of non-continuous track formation in InP under swift ion implantation
pp 375-380 - W. Szyszko
Laser induced diffusion in Ge/Sb – Si films
pp 381-392